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Overview

SKU: KSM56R46BD4-64MH
UPC: 740617360332
Condition: New
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Kingston KSM56R46BD4-64MH 64GB 5600MT/S DDR5 ECC REG CL46 DIMM 2RX4 Micron

Kingston KSM56R46BD4-64MH 64GB DDR5-5600 ECC Registered Server DIMMOverviewThe Kingston KSM56R46BD4-64MH is a 64GB DDR5 Registered ECC DIMM running at…

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Kingston KSM56R46BD4-64MH 64GB 5600MT/S DDR5 ECC REG CL46 DIMM 2RX4 Micron

$3,090.00
$1,963.99

Overview

SKU: KSM56R46BD4-64MH
UPC: 740617360332
Condition: New

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Questions about this product? Free pre-sales support from a senior specialist — product questions, compatibility checks, BOM quotes, price confirmation — typically answered within one business day. Need camera placement or system design work? Engineering time is $175 per hour (qty 1 = 1 hour). Hardware buyers get up to one hour ($175) credited back on their order.

Description

Kingston KSM56R46BD4-64MH 64GB DDR5-5600 ECC Registered Server DIMM

Overview

The Kingston KSM56R46BD4-64MH is a 64GB DDR5 Registered ECC DIMM running at 5600MT/s — designed for server and workstation platforms that require high-density, error-correcting memory in a single module slot. Built on a 2Rx4 double-rank configuration with Micron H-die ICs, this module targets memory-intensive server workloads where both capacity and signal integrity matter. If you're populating a dual-socket server tray or a workstation chassis that demands validated ECC registered memory, this is the Kingston module built for that role.

Explore the broader Kingston server memory lineup or browse the full server memory category to compare capacity and speed options across DDR5 registered modules.

Key Features

  • 64GB Single-Module Density at 5600MT/s: A single KSM56R46BD4-64MH slot delivers 64GB of usable capacity — useful when chassis slot count is constrained or when you're staging memory expansion one DIMM at a time. At 5600MT/s, this is among the faster DDR5 RDIMM speeds available, which matters in memory-bandwidth-sensitive workloads like in-memory databases or large VM footprints.
  • ECC with On-Die ECC: This module operates two layers of error correction — traditional DIMM-level ECC across the memory channel, and On-Die ECC embedded within the Micron H ICs themselves. On-Die ECC corrects single-bit errors at the DRAM level before they propagate to the memory controller, reducing the uncorrectable error rate in high-density DDR5 configurations where DRAM cell geometry makes bit errors more likely.
  • Registered (Buffered) Architecture: The register on each RDIMM re-drives command and address signals, allowing the memory controller to support higher module counts per channel without electrical loading issues. If you're running 4+ DIMMs per channel, registered modules are the correct choice — unbuffered DIMMs cannot support that configuration reliably.
  • CAS Latency 46 (CL46) at 5600MT/s: CL46 at this speed gives an absolute latency of approximately 16.4ns — competitive for DDR5 RDIMMs at this density. The row cycle time of 48ns and row active time of 32ns are relevant when evaluating memory subsystem performance under random-access workloads.
  • 1.1V Operating Voltage: DDR5's native 1.1V supply (down from DDR4's 1.2V) translates to measurable power savings at scale. In a fully populated 24-DIMM server chassis, the per-DIMM voltage reduction adds up — relevant for operators watching rack-level power draw. The 1.8V VPP programming rail is handled by the motherboard's voltage regulator and requires no separate consideration during installation.
  • Wide Thermal Envelope: Rated for 0–95°C operating range, this module handles the elevated ambient temperatures common in dense 2U or blade server environments where airflow is restricted and DIMM temperatures routinely run above typical desktop conditions. Storage temperature is rated from -55°C to 100°C, covering transit and warehouse extremes without issue.
  • Micron H-Die ICs: The Micron H designation identifies the specific DRAM IC revision — a detail that matters for server operators cross-referencing motherboard QVLs (Qualified Vendor Lists). Some platforms specify the die revision explicitly, and Micron H is one of the validated IC families on current-generation Intel Xeon and AMD EPYC DDR5 platforms.
  • 288-Pin DIMM Form Factor: Standard DDR5 288-pin slot — compatible with current-generation server motherboards. Note that DDR5 uses the same 288-pin count as DDR4 but with a different key notch position; the two generations are not interchangeable, and the physical keying prevents accidental insertion into a DDR4 slot.

Integration & Compatibility

The KSM56R46BD4-64MH is intended for server and workstation platforms with DDR5 RDIMM support — primarily current-generation Intel Xeon Scalable (Sapphire Rapids and later) and AMD EPYC (Genoa and later) systems. Before installing, verify your motherboard's QVL for this specific Kingston part number or its Micron H-die equivalent. Memory controller support for 5600MT/s may require BIOS configuration on some platforms — some boards default to a lower validated speed and require manual EXPO/XMP-equivalent profile selection for server DIMMs.

For systems running virtualization stacks (VMware vSphere, Proxmox, Hyper-V), the 64GB density per DIMM provides efficient VM memory allocation without requiring all slots populated. Pair with a compatible server storage solution or review our memory selection guide to match capacity targets to your workload requirements. If you're evaluating NVR or surveillance server builds, see the NVR category for platforms that may qualify this module.

Frequently Asked Questions

Q: Is the KSM56R46BD4-64MH compatible with DDR4 server motherboards?

A: No. DDR5 and DDR4 use different key notch positions on the 288-pin DIMM connector. The KSM56R46BD4-64MH is physically keyed for DDR5 slots only and cannot be installed in a DDR4 socket.

Q: What does the Micron H designation mean on this module?

A: The

Specifications
On-Die ECC: Yes
CAS latency: 46
Internal memory: 64 GB
Memory layout (modules x size: 1 x 64 GB
Internal memory type: DDR5
Memory data transfer rate: 5600 MT/s
Component for: PC
Memory form factor: 288-pin DIMM
ECC: Yes
Buffered memory type: Registered (buffered)
Memory voltage: 1.1 V
Row cycle time: 48 ns
Refresh row cycle time: 295 ns
Row active time: 32 ns
Row Precharge Time (TRP: 16
Programming power voltage (VPP: 1.8 V
Operating temperature (T-T: 0 - 95 °C
Storage temperature (T-T: -55 - 100 °C
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