AMD OSA2214GAA6CQ Power MOSFET

Overview

The OSA2214GAA6CQ is a discrete power MOSFET rated for 30V drain-source voltage and 5.5A continuous drain current, packaged in a compact V-DFN3020-8 (Type N) footprint. The listed electrical characteristics for OSA2214GAA6CQ — on-resistance, gate charge, and switching timing — align with a low-voltage switching MOSFET rather than a general-purpose processor, and this page is written strictly against those characteristics rather than any CPU-class claims that the available data does not support. At 0.011g per unit, this is a board-level component intended for integration into a larger power stage, not a standalone end-device.

Key Features

• 30V Drain-Source Voltage (Vds): Sets the hard ceiling for the off-state voltage the device can block. Design your rail with margin below 30V — running close to the rated limit erodes safety margin under transient spikes.
• 5.5A Continuous Drain Current: The steady-state current the part handles without exceeding thermal limits under continuous operation — size your load current with margin under this figure, not against the 30A pulsed rating.
• 30A Pulsed Drain Current: A short-duration peak rating well above the continuous figure — useful for inrush or switching transients, but not a number to design continuous load around.
• 35 mOhm Static Rds(on): Low on-resistance directly cuts conduction losses (I²R) during the on-state — at 5.5A continuous this keeps self-heating manageable in compact layouts.
• 0.77W Total Power Dissipation: The thermal budget available before junction temperature limits are hit — combined with the 162°C/W junction-to-ambient thermal resistance, this tells you how much heatsinking or copper pour the layout needs.
• 10.7°C/W Junction-to-Case Thermal Resistance: Roughly 15x lower than the junction-to-ambient figure, meaning a solid thermal path to a case or heatsink moves far more heat than relying on ambient air alone — plan your PCB copper accordingly.
• 4.5nC Total Gate Charge: Lower gate charge means less energy needed to switch the device each cycle, which directly reduces gate-drive losses at higher switching frequencies.
• 3.0ns Turn-On Delay / 3.3ns Turn-On Rise Time: Fast turn-on transition minimizes the time spent in the lossy linear region during each switching event, cutting switching losses in PWM applications.
• 7.9ns Reverse Recovery Time: A short reverse recovery time reduces the energy lost when the body diode commutates off, relevant in synchronous switching topologies.
• -55°C to +150°C Operating Temperature Range: Wide operating range supports both cold-start industrial environments and thermally dense enclosures without derating the part outside its window.
• 1.0V Gate Threshold Voltage: A low threshold allows reliable switching from logic-level gate drive, simplifying the drive circuit design in low-voltage control systems.
• V-DFN3020-8 (Type N) Package: A compact leadless surface-mount footprint that saves board area versus larger discrete packages — confirm your pick-and-place and reflow profile support this package size before committing to layout.

Integration & Compatibility

OSA2214GAA6CQ is a discrete component intended for board-level integration into power conversion or switching circuits — it is not a standalone networked device and carries no protocol, firmware, or platform compatibility claims. Confirm your gate drive circuit matches the 1.0V threshold and 4.5nC total gate charge, and validate thermal design against the 0.77W dissipation budget and 10.7°C/W junction-to-case resistance for your specific enclosure and copper layout before finalizing a design using OSA2214GAA6CQ.

Frequently Asked Questions

Q: What is the maximum drain-source voltage for the OSA2214GAA6CQ?

A: 30V.

Q: What is the continuous drain current rating?

A: 5.5A continuous, with a 30A pulsed rating for short-duration transients.

Q: What package does the OSA2214GAA6CQ use?

A: V-DFN3020-8 (Type N), a compact leadless surface-mount package.

Q: What is the operating temperature range?

A: -55°C to +150°C.

Q: What is the static drain-source on-resistance (Rds(on))?

A: 35 mOhm.

Ted Perry

The OSA2214GAA6CQ is a 30V/5.5A power MOSFET, and the number that jumps out to me first is the 35mOhm static Rds(on) paired with a 0.77W total power dissipation budget — that combination tells you this part is built for low-loss switching in a thermally constrained footprint, not high continuous current.

Technical Highlights:

• 35 mOhm Rds(on): at 5.5A continuous, conduction loss (I²R) stays low enough to keep the 0.77W dissipation budget in check without aggressive heatsinking.
• 4.5nC Total Gate Charge / 1.0V Threshold: low gate charge and a logic-level threshold mean a modest gate driver switches this part cleanly — relevant if you're driving it directly from a low-voltage controller.
• 10.7°C/W Junction-to-Case vs 162°C/W Junction-to-Ambient: that roughly 15x gap is the whole story on thermal design — without a solid case-side thermal path, ambient-only cooling limits how hard you can push this part continuously.

Deployment Considerations:

• The V-DFN3020-8 (Type N) package is leadless and compact — verify your reflow profile and inspection process (AOI/X-ray) can handle a package this size before committing to a board spin.
• Watch the gap between the 5.5A continuous and 30A pulsed ratings — designing continuous load anywhere near the pulsed figure will violate the 0.77W dissipation limit fast.

OSA2214GAA6CQ fits a compact DC-DC or load-switching stage where board space is tight and switching losses matter more than raw continuous current — not a design calling for a high-current, high-Rds(on)-tolerant part.