Drain Source Breakdown Voltage:
25 V
Zero Gate Voltage Drain Current:
1 μA
Gate Body Leakage Current:
100 nA
Gate Threshold Voltage:
1.3 V
Static Drain Source On Resistance:
3 mΩ
Forward Transconductance:
145 S
Diode Forward Voltage:
0.7 V
Maximum Body Diode Continuous Current:
25 A
Input Capacitance:
1225 pF
Output Capacitance:
370 pF
Reverse Transfer Capacitance:
48 pF
Gate Resistance:
0.6 Ω
Total Gate Charge 10V:
15 nC
Total Gate Charge 4.5V:
6.5 nC
Gate Source Charge:
2.7 nC
Gate Drain Charge:
2 nC
Turn On Delay Time:
7 ns
Turn On Rise Time:
3 ns
Turn Off Delay Time:
20 ns
Turn Off Fall Time:
2 ns
Body Diode Reverse Recovery Time:
11.5 ns
Body Diode Reverse Recovery Charge:
17.5 nC
Static Drain Source On Resistance T125:
4.1 mΩ
Forward Transconductance Vgs 5V:
145 S
Input Capacitance Ciss:
1225 pF
Output Capacitance Coss:
370 pF
Reverse Transfer Capacitance Crss:
48 pF
Gate Resistance Rg:
0.6 Ω
Total Gate Charge Qg 10V:
15 nC
Total Gate Charge Qg 4.5V:
6.5 nC
Turn On Delay Time td(on:
7 ns
Turn On Rise Time tr:
3 ns
Turn Off Delay Time td(off:
20 ns
Turn Off Fall Time tf:
2 ns
Body Diode Reverse Recovery Time trr:
11.5 ns
Body Diode Reverse Recovery Charge Qrr:
17.5 nC
Zero Gate Voltage Drain Current T55:
5 μA
Gate Threshold Voltage Vgs(th:
1.0 V
Static Drain Source On Resistance T125 C:
1 mΩ
Forward Transconductance Vgs 5V C:
120 S
Diode Forward Voltage C:
0.67 V
Maximum Body Diode Continuous Current C:
85 A
Input Capacitance Ciss C:
4860 pF
Output Capacitance Coss C:
1325 pF
Reverse Transfer Capacitance Crss C:
145 pF
Gate Resistance Rg C:
0.6 Ω
Total Gate Charge Qg 10V C:
60.6 nC
Total Gate Charge Qg 4.5V C:
25 nC
Gate Source Charge C:
11.8 nC
Gate Drain Charge C:
4.4 nC
Turn On Delay Time td(on) C:
11 ns
Turn On Rise Time tr C:
7 ns
Turn Off Delay Time td(off) C:
48 ns
Turn Off Fall Time tf C:
8.5 ns
Body Diode Reverse Recovery Time trr C:
20.5 ns
Body Diode Reverse Recovery Charge Qrr C:
55 nC
